Deskripsi Pekerjaan
Join the cutting-edge team at A*STAR's Institute of Microelectronics (IME) and advance your career in semiconductor materials science. We are seeking a highly skilled Senior Process Engineer to lead our efforts in Silicon Carbide (SiC) crystal growth using the Physical Vapor Transport (PVT) method. This is a unique opportunity to work on the development of next-generation wide-bandgap semiconductor materials, specifically supporting the APM (Advanced Materials) and NSTIC (NanoScience & Technology Innovation Centre) initiatives focused on GaN.
In this role, you will be at the forefront of material engineering, tasked with optimizing PVT processes to achieve high-purity, low-defect SiC substrates essential for high-power electronics. You will collaborate with a multidisciplinary team of researchers and engineers to solve complex material challenges, enhance production yields, and drive innovations that power the future of energy-efficient devices. If you are passionate about pushing the boundaries of what is possible in semiconductor fabrication, we want to hear from you.
Tanggung Jawab
- Design, execute, and optimize PVT crystal growth processes for high-quality Silicon Carbide (SiC) substrates.
- Analyze process parameters (temperature, pressure, atmosphere) to control crystal morphology and reduce defect densities.
- Develop and validate standard operating procedures (SOPs) for industrial-scale crystal growth equipment.
- Conduct failure analysis and root-cause investigations to troubleshoot growth chamber issues and material defects.
- Collaborate with equipment engineering teams to upgrade and maintain PVT reactor systems.
- Prepare detailed technical reports and presentations to communicate findings to stakeholders and management.
- Support the transfer of laboratory-scale processes to pilot and production environments.
Kualifikasi
- Bachelor’s or Master’s degree in Materials Science, Chemical Engineering, Physics, or a related field.
- Minimum of 5 years of experience in semiconductor process engineering, specifically in crystal growth, PVT, or CVD processes.
- Deep understanding of semiconductor material properties, defect physics, and growth kinetics.
- Strong experience with GaN or SiC epitaxy and device fabrication processes is highly desirable.
- Excellent analytical, problem-solving, and troubleshooting skills in a cleanroom environment.
- Proficiency in data analysis tools and process simulation software.
- Ability to work independently as well as in a collaborative, multidisciplinary research team.